Interests in 4H b -TaS 2 , characterized by alternating layers of 1T-TaS2 and 2H-TaS2, has recently been sparked by reports of various novel ground states, including potential topological superconductivity and spin liquid states. This has led to numerous studies on both pure and Se-doped single crystals of 4H b -TaS 2 . However, certain fundamental transport properties such as magnetoresistance and Hall coefficient exhibit discrepancies among different studies in the literature, where either pure compounds or Se microdoped samples are often used. Hence, it is crucial to carefully assess the impact of crystal quality on these transport properties and identify the origins of different transport signatures. Here, we conduct a thorough examination of the growth parameters crucial for cultivating high-quality single crystals of pure 4H b -TaS 2 . We identify polycrystalline seeds, growth temperature, temperature gradient, and growth duration as key factors influencing crystal quality. Through our transport measurements, we observe that variations in sample quality, stemming from different growth conditions, primarily impact the CDW transition temperatures without entirely suppressing them. This stands in stark contrast to the effects observed with Se microdoping, as reported in literature, indicating a heightened sensitivity of the Fermi surface to Se doping compared to disorder. Our findings thus provide valuable insights into the intricate ground states of 4H b -TaS 2 and contribute towards a deeper understanding of its complex behavior.
DOI：10.1016/j.jallcom.2025.183768